Memory Retention Charateristics of MFMIS Structure Using SBT and Al2O3 Buffer Layer

Author: Kang Seung-Kuk   Ishiwara Hiroshi  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.273, Iss.1, 2002-01, pp. : 101-106

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