Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure

By Nishikawa T.   Otsuka T.   Morita K.  

Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. : 41-50

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THE EFFECT OF REDUCED GATE LEAKAGE ON IMPROVED RETENTION TIME OF METAL-FERROELECTRIC (PbZr0.53Ti0.47O3)-INSULATOR (ZrO2)-SEMICONDUCTOR CAPACITORS

By Shih Wen-chieh   Lee Joseph Ya-min  

Integrated Ferroelectrics, Vol. 98, Iss. 1, 2008-01 ,pp. : 113-120

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EFFECT OF ANNEALING TEMPERATURE ON LEAKAGE CURRENT CHARACTERISTICS OF Bi 3.25 La 0.75 Ti 3 O 12 THIN FILMS PREPARED BY SOL-GEL METHOD

By YU JUN   DONG-YUN GUO   YUN-BO WANG   JUN-XIONG GAO  

Integrated Ferroelectrics, Vol. 79, Iss. 1, 2006-11 ,pp. : 97-103

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Ferroelectric Bi Modified YMnO3 Thin Films Grown on Si (001) Using Y2O3 Buffer Layer for Metal-Ferroelectric-Insulator-Semiconductor Structure

By Choi Taekjib   Shin Sanghun   Kim Young Sung   Lee Jaichan  

Integrated Ferroelectrics, Vol. 45, Iss. 1, 2002-01 ,pp. : 23-29

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LEAKAGE CURRENT MECHANISM OF POLYCRYSTALLINE BiFeO3 FILMS WITH PT ELECTRODE

By Naganuma Hiroshi   Inoue Yosuke   Okamura Soichiro  

Integrated Ferroelectrics, Vol. 95, Iss. 1, 2007-12 ,pp. : 242-247

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