Author: Jain S.C. Willis J.R. Bullough R.
Publisher: Taylor & Francis Ltd
ISSN: 1460-6976
Source: Advances In Physics, Vol.39, Iss.2, 1990-04, pp. : 127-190
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Role of hydrogen during Si capping of strained Ge or Si 1-x Ge x hut clusters
By Dentel D. Bischoff J.L. Kubler L. Bolmont D.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :
Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE
By Joelsson K.B. Ni W.-X. Pozina G. Hultman L. Hansson G.V.
Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. :
By Engsiew Kang Anwar Sohail Ismail Razali
Journal of Computational and Theoretical Nanoscience, Vol. 10, Iss. 10, 2013-10 ,pp. :