Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

Access to resources Recommend Favorite

Surface segregation of boron atoms in Si and strained Si 1-x Ge x layers during MBE growth: Experiment and simulation

By Osten H.J.   Kruger D.  

Thin Solid Films, Vol. 258, Iss. 1, 1995-03 ,pp. : 137-142

Elsevier

Access to resources Recommend Favorite

Threshold Voltage Variation of Nanoscale Strained Si/Si 1-x Ge x MOSFETs in the Presence of Punch Through Effect

By Engsiew Kang   Anwar Sohail   Ismail Razali  

Journal of Computational and Theoretical Nanoscience, Vol. 10, Iss. 10, 2013-10 ,pp. : 2366-2370

American Scientific Publishers

Access to resources Recommend Favorite

A review of theoretical and experimental work on the structure of Ge x Si 1- x strained layers and superlattices, with extensive bibliography

By Jain S.C.   Willis J.R.   Bullough R.  

Advances In Physics, Vol. 39, Iss. 2, 1990-04 ,pp. : 127-190

Taylor & Francis Ltd

Access to resources Recommend Favorite

Strained Si 1-x Ge x graded channel PMOSFET grown by UHVCVD

By Su C.Y.   Wu S.L.   Jinn Chang S.   Chen L.P.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 371-374

Elsevier

Access to resources Recommend Favorite