Related content

Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs

By  

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15010-15017

IOP Publishing

Access to resources Recommend Favorite

Effects of rapid thermal annealing on ohmic contact of AlGaN/GaN HEMTs

By Yanxu Zhu   Weiwei Cao   Yuyu Fan   Ye Deng   Chen Xu  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 26004-26007

IOP Publishing

Access to resources Recommend Favorite

Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs

By Martin-Horcajo S   Wang A   Romero M F   Tadjer M J   Koehler A D   Anderson T J   Calle F  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115013-115021

IOP Publishing

Access to resources Recommend Favorite

60 Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs

By Aktas O.   Kuliev A.   Kumar V.   Schwindt R.   Toshkov S.   Costescu D.   Stubbins J.   Adesida I.  

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 471-475

Elsevier

Access to resources Recommend Favorite

Effects of oxygen plasma treatment on V _th uniformity of recessed-gate AlGaN/GaN HEMTs

By Hong Ki-Ha   Choi Hyuk   Hwang Injun   Kim Jongseob  

Electronic Materials Letters, Vol. 10, Iss. 2, 2014-03 ,pp. : 363-367

Springer Publishing Company

Access to resources Recommend Favorite