Related content

An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness

By Xueli Ma   Hong Yang   Wenwu Wang   Huaxiang Yin   Huilong Zhu   Chao Zhao   Dapeng Chen   Tianchun Ye  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 96001-96004

IOP Publishing

Access to resources Recommend Favorite

Static induction transistor using TaN thin film as gate electrode for high-performance application

By Zheng Z.   Chen Y.  

Electronic Materials Letters, Vol. 10, Iss. 2, 2014-03 ,pp. : 383-385

Springer Publishing Company

Access to resources Recommend Favorite

Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

By ShuXiang Zhang   Hong Yang   Bo Tang   Zhaoyun Tang   Yefeng Xu   Jing Xu   Jiang Yan  

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 106001-106005

IOP Publishing

Access to resources Recommend Favorite

Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

By Yuan J. S.  

International Journal of Electronics, Vol. 85, Iss. 1, 1998-07 ,pp. : 1-9

Taylor & Francis Ltd

Access to resources Recommend Favorite

Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

By Chandra S. Theodore   Balamurugan N. B.  

Journal of Semiconductors, Vol. 35, Iss. 4, 2014-04 ,pp. : 44001-44004

IOP Publishing

Access to resources Recommend Favorite