Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

Author： ShuXiang Zhang   Hong Yang   Bo Tang   Zhaoyun Tang   Yefeng Xu   Jing Xu   Jiang Yan  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.35, Iss.10, 2014-10, pp. : 106001-106005

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