Characteristics of an Indium-Rich InGaN p-n Junction Grown on a Strain-Relaxed InGaN Buffer Layer

By Lian-Hong Yang   Bao-Hua Zhang   Fu-Qiang Guo  

Chinese Physics Letters, Vol. 30, Iss. 4, 2013-04 ,pp. : 47301-47303

IOP Publishing

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Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys

By Morales F.M.   Mánuel J.M.   García R.   Reuters B.   Kalisch H.   Vescan A.  

Journal of Physics D: Applied Physics, Vol. 46, Iss. 24, 2013-06 ,pp. : 245502-245508

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Influence of Si doping on the structural and optical properties of InGaN epilayers

By Ping-Yuan Lu   Zi-Guang Ma   Shi-Chen Su   Li Zhang   Hong Chen   Hai-Qiang Jia   Yang Jiang   Wei-Ning Qian   Geng Wang   Tai-Ping Lu   Miao He  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 106803-106806

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Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

By Jun Chen   Guang-Han Fan   Yun-Yan Zhang  

Chinese Physics B, Vol. 22, Iss. 1, 2013-01 ,pp. : 18504-18507

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Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

By Yuan-Jie Lü   Zhi-Hong Feng   Zhao-Jun Lin   Hong-Yu Guo   Guo-Dong Gu   Jia-Yun Yin   Yuan-Gang Wang   Peng Xu   Xu-Bo Song   Shu-Jun Cai  

Chinese Physics B, Vol. 23, Iss. 7, 2014-07 ,pp. : 77105-77108

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