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Nanotechnology, Vol. 26, Iss. 44, 2015-11 ,pp. : 445602-445613

IOP Publishing

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Production of three-dimensional quantum dot lattice of Ge/Si core–shell quantum dots and Si/Ge layers in an alumina glass matrix

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EFFECT OF DEPOSITION CONDITION ON THE FERROELECTRIC PROPERTIES OF BARIUM SODIUM NIOBATE THIN FILMS DEPOSITED BY ION BEAM SPUTTERING

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SiGe quantum dot crystals with periods down to 35 nm

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Effects of ion beam voltage on properties of indium tin oxide films prepared by ion beam sputtering

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