Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

Publisher: IOP Publishing

E-ISSN: 1741-3540|32|2|28502-28504

ISSN: 0256-307X

Source: Chinese Physics Letters, Vol.32, Iss.2, 2015-02, pp. : 28502-28504

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Abstract