Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

By Cheetham K J   Carrington P J   Krier A   Patel I I   Martin F L  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15004-15007

IOP Publishing

Access to resources Recommend Favorite

Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

By Reyes D F   Ulloa J M   Guzman A   Hierro A   Sales D L   Beanland R   Sanchez A M   González D  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114006-114014

IOP Publishing

Access to resources Recommend Favorite

Hot wall epitaxy of Sb₂Te₃ layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

By Takagaki Y   Jenichen B   Jahn U   Manzke Y   Ramsteiner M   Friedland K-J  

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25012-25018

IOP Publishing

Access to resources Recommend Favorite

InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

By Lu Q   Zhuang Q   Marshall A   Kesaria M   Beanland R   Krier A  

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75011-75018

IOP Publishing

Access to resources Recommend Favorite

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

By  

Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. : 114003-114007

IOP Publishing

Access to resources Recommend Favorite