High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 V operation

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|3|35020-35027

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.3, 2015-03, pp. : 35020-35027

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