Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer

By Sang Min Jung   Chang Taek Lee   Moo Whan Shin  

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 75012-75017

IOP Publishing

Access to resources Recommend Favorite

A comparative study of Ge/Au/Ni/Au-based ohmic contact on graphene

By Wenchao Min   Hao Sun   Qilian Zhang   Zhiying Chen   Yanhui Zhang   Guanghui Yu   Xiaowei Sun  

Journal of Semiconductors, Vol. 35, Iss. 5, 2014-05 ,pp. : 56001-56004

IOP Publishing

Access to resources Recommend Favorite

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

By Ofuonye Benedict   Lee Jaseun   Yan Minjun   Sun Changwoo   Zuo Jian-Min   Adesida Ilesanmi  

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95005-95014

IOP Publishing

Access to resources Recommend Favorite

The ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe

By Kim Dae-Woo   Park Hee-Soo   Kwak Joon   Baik Hong   Lee Sung-Man  

Journal of Electronic Materials, Vol. 28, Iss. 8, 1999-08 ,pp. : 939-943

Springer Publishing Company

Access to resources Recommend Favorite

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al_xGa_1−xAs heterostructures

By Koop E J   Iqbal M J   Limbach F   Boute M   van Wees B J   Reuter D   Wieck A D   Kooi B J    

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25006-25014

IOP Publishing

Access to resources Recommend Favorite