Effect of novel alkaline copper slurry on 300 mm copper global planarization

By Weijuan Liu   Yuling Liu   Chenwei Wang   Guodong Chen   Mengting Jiang   Haobo Yuan   Pengfei Cheng  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 96003-96006

IOP Publishing

Access to resources Recommend Favorite

Evaluation of planarization performance for a novel alkaline copper slurry under a low abrasive concentration

By  

Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. : 116002-116007

IOP Publishing

Access to resources Recommend Favorite

A new weakly alkaline slurry for copper planarization at a reduced down pressure

By Rui Chen   Jin Kang   Yuling Liu   Chenwei Wang   Ting Cai   Xin Li  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 26005-26008

IOP Publishing

Access to resources Recommend Favorite

Electrochemical investigation of copper chemical mechanical planarization in alkaline slurry without an inhibitor

By Aochen Wang   Shengli Wang   Yuling Liu   Yan Li  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 26003-26008

IOP Publishing

Access to resources Recommend Favorite

The combinatorial effect of complexing agent and inhibitor on chemical-mechanical planarization of copper

By Du T.   Luo Y.   Desai V.  

Microelectronic Engineering, Vol. 71, Iss. 1, 2004-01 ,pp. : 90-97

Elsevier

Access to resources Recommend Favorite