Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs

Author: Takahashi N   Watanabe K   Taniguchi T   Nagashio K  

Publisher: IOP Publishing

E-ISSN: 1361-6528|26|17|175708-175713

ISSN: 0957-4484

Source: Nanotechnology, Vol.26, Iss.17, 2015-05, pp. : 175708-175713

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