Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm

Author: Shi Tuanwei   Fu Mengqi   Pan Dong   Guo Yao   Zhao Jianhua   Chen Qing  

Publisher: IOP Publishing

E-ISSN: 1361-6528|26|17|175202-175208

ISSN: 0957-4484

Source: Nanotechnology, Vol.26, Iss.17, 2015-05, pp. : 175202-175208

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