High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

Author： Bai-Qing Xue   Sheng-Kai Wang   Le Han   Hu-Dong Chang   Bing Sun   Wei Zhao   Hong-Gang Liu  

Publisher： IOP Publishing

E-ISSN： 1741-4199|22|10|107302-107305

ISSN： 1674-1056

Source： Chinese Physics B, Vol.22, Iss.10, 2013-10, pp. : 107302-107305

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