The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Author: Lei Shi   Shi-Wei Feng   Chun-Sheng Guo   Hui Zhu   Ning Wan  

Publisher: IOP Publishing

ISSN: 1674-1056

Source: Chinese Physics B, Vol.22, Iss.2, 2013-02, pp. : 27201-27204

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