Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy

By Kuo H.   Kuo J.   Wang Y.   Lin C.   Chen H.   Stillman G.  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 944-948

Springer Publishing Company

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Type I and Type II Alignment of the Light Hole Band in In 0.15 Ga 0.85 As/GaAs and in ln 0.15 Ga 0.85 As/Al 0.15 Ga 0.85 As Strained Quantum Wells

By Goldys E.   Zuo H.   Phillips M.   Contessa CM.   Vaughan M.   Tansley T.  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 922-927

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Composition and temperature dependence of the direct band gap of GaAs 1−x N x (0≤x≤0.0232) using contactless electroreflectance

By Malikova L.   Pollak Fred   Bhat RAJ  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 484-487

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Valence Band Studies of p - and n -Type Ba 8 Ga 16 Ge 30 Using High-Resolution Photoelectron Spectroscopy

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Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 769-772

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Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

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Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94005-94011

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