Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

Author: Marko I P   Jin S R   Hild K   Batool Z   Bushell Z L   Ludewig P   Stolz W   Volz K   Butkutė R   Pačebutas V   Geizutis A   Krotkus A   Sweeney S J  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|9|94008-94017

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.9, 2015-09, pp. : 94008-94017

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content