Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

By Ren Y.   Micovic M.   Cai W.   Mohney S.   Lord S.   Miller D.   Mayer T.  

Journal of Electronic Materials, Vol. 28, Iss. 7, 1999-07 ,pp. : 887-893

Springer Publishing Company

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Super-flat interfaces in In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

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Journal of Electronic Materials, Vol. 27, Iss. 9, 1998-09 ,pp. : 1043-1046

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Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy

By Antonell M.   Abernathy C.   Krishnamoorthy V.   Gedridge R.   Haynes T.  

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1283-1286

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Effect of rapid thermal annealing on InP_1−xBi_x grown by molecular beam epitaxy

By Wu X Y   Wang K   Pan W W   Wang P   Li Y Y   Song Y X   Gu Y   Yue L   Xu H   Zhang Z P   Cui J   Gong Q   Wang S M  

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94014-94017

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Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors

By Garcia J.   Dua C.   Mohammadi S.   Park J.   Pavlidis D.  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 442-445

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