Does Bi form clusters in GaAs_{1 − x}Bi _x alloys?

By Punkkinen M P J   Laukkanen P   Kuzmin M   Levämäki H   Lång J   Tuominen M   Yasir M   Dahl J   Lu S   Delczeg-Czirjak E K   Vitos L   Kokko K  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115007-115014

IOP Publishing

Access to resources Recommend Favorite

Photoluminescence of GaAs nanowires at an energy larger than the zincblende band-gap: dependence on growth parameters

By Martelli Faustino   Priante Giacomo   Rubini Silvia  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55020-55025

IOP Publishing

Access to resources Recommend Favorite

Composition and temperature dependence of the direct band gap of GaAs 1−x N x (0≤x≤0.0232) using contactless electroreflectance

By Malikova L.   Pollak Fred   Bhat RAJ  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 484-487

Springer Publishing Company

Access to resources Recommend Favorite

MOVPE growth of Si-doped GaAs and Al x Ga 1-x As using tertiarybutylarsine (TBA) in pure N 2 ambient

By Huang G.S.   Tang X.H.   Zhang B.L.  

Materials Science in Semiconductor Processing, Vol. 6, Iss. 4, 2003-08 ,pp. : 171-174

Elsevier

Access to resources Recommend Favorite

Optimization of the structural properties of Hg 1−x Cd x Te (x = 0.18−0.30) alloys: Growth and modeling

By Parikh A.   Pearson S.   Bicknell-Tassius R.   Zhang L.   Benz R.   Summers C.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 524-528

Springer Publishing Company

Access to resources Recommend Favorite