Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

By Hwang J.   Schaff W.J.   Green B.M.   Cha H.   Eastman L.F.  

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Elsevier

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N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

By Ahmadi Elaheh   Wu Feng   Li Haoran   Kaun Stephen W   Tahhan Maher   Hestroffer Karine   Keller Stacia   Speck James S   Mishra Umesh K  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55012-55019

IOP Publishing

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Characterization of AlGaN/GaN Structures on Various Substrates Grown by Radio Frequency-Plasma Assisted Molecular Beam Epitaxy

By Kang Sangbeom   Doolittle W. Alan   Lee K. K.   Dai Z.R.   Wang Z.L.   Stock Stuart R.   Brown April S.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 156-161

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Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

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Transport coefficients of AlGaN/GaN heterostructures

By Ahoujja M.   Mitchel W.   Elhamri S.   Newrock R.   Mast D.   Redwing J.   Tischler M.   Flynn J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 210-214

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