Properties of Si Doped Al_0.4Ga_0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD

By Chen-Hui Yu   Cheng Liu   Xiang-Yun Han   Wei Kang   Yan-Yan Fang   Jiang-Nan Dai   Zhi-Hao Wu   Chang-Qing Chen  

Chinese Physics Letters, Vol. 28, Iss. 2, 2011-02 ,pp. : 27301-27304

IOP Publishing

Access to resources Recommend Favorite

The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD

By Pei-Qiang Xu   Yang Jiang   Zi-Guang Ma   Zhen Deng   Tai-Ping Lu   Chun-Hua Du   Yu-Tao Fang   Peng Zuo   Hong Chen  

Chinese Physics Letters, Vol. 30, Iss. 2, 2013-02 ,pp. : 28101-28104

IOP Publishing

Access to resources Recommend Favorite

Thermal Conductivity of AlN and SiC Thin Films

By Choi Sun   Kim Dongsik   Choa Sung-Hoon   Lee Sung-Hoon   Kim Jong-Kuk  

International Journal of Thermophysics, Vol. 27, Iss. 3, 2006-05 ,pp. : 896-905

Springer Publishing Company

Access to resources Recommend Favorite

Infrared and Raman spectroscopic investigation of thin films of AlN and SiC on Si substrates

By Hobert H.   Dunken H.H.   Meinschien J.   Stafast H.  

Vibrational Spectroscopy, Vol. 19, Iss. 2, 1999-04 ,pp. : 205-211

Elsevier

Access to resources Recommend Favorite

GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer

By Yu-Tao Fang   Yang Jiang   Zhen Deng   Peng Zuo   Hong Chen  

Chinese Physics Letters, Vol. 31, Iss. 2, 2014-02 ,pp. : 28101-28104

IOP Publishing

Access to resources Recommend Favorite