Effects of intentional oxygen and carbon doping in MOVPE‐grown GaN layers on photoelectric properties

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-3951|252|5|1116-1120

ISSN: 0370-1972

Source: PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 1116-1120

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract