Effects of intentional oxygen and carbon doping in MOVPE‐grown GaN layers on photoelectric properties

E-ISSN： 1521-3951|252|5|1116-1120

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 1116-1120

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