Analysis on the enhanced hole concentration in p‐type GaN grown by indium‐surfactant‐assisted Mg delta doping

E-ISSN： 1521-3951|252|5|1109-1115

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 1109-1115

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