Preparation of large step‐free mesas on Si(111) by molecular beam epitaxy

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|9|10‐11|2050-2053

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.9, Iss.10‐11, 2012-10, pp. : 2050-2053

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

Elsevier

Access to resources Recommend Favorite

Rapid thermal annealing effects in CdTe (111) thin films grown on Si (100) substrates by molecular beam epitaxy

By Han M.S.   Ryu Y.S.   Song B.K.   Kang T.W.   Kim T.W.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 196-199

Elsevier

Access to resources Recommend Favorite

Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy

By Torrison L.   Tolle J.   Tsong I.S.T.   Kouvetakis J.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 106-111

Elsevier

Access to resources Recommend Favorite

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

By  

Materials Science Forum, Vol. 2016, Iss. 852, 2016-05 ,pp. : 349-355

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of the crystallinity of CdTe epitaxial film grown on Si substrates by molecular beam epitaxy using the two-step growth method

By Kang T.W.   Han M.S.   Ryu Y.S.   Song B.K.   Kim T.W.  

Thin Solid Films, Vol. 292, Iss. 1, 1997-01 ,pp. : 232-235

Elsevier

Access to resources Recommend Favorite