Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-4079|50|6|425-431

ISSN： 0232-1300

Source： CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol.50, Iss.6, 2015-06, pp. : 425-431

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