Effects of passivation on breakdown voltage and leakage current of normally-off InAlN/GaN MISHFETs—a simulation study

Author： Tang Chenjie   Shi Junxia  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.12, 2014-12, pp. : 125004-125010

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