Related content

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite p–n junction

By He Jin   Li Yingxue   Zhang Xing   Wang Yangyuan  

International Journal of Electronics, Vol. 88, Iss. 10, 2001-10 ,pp. : 1067-1072

Taylor & Francis Ltd

Access to resources Recommend Favorite

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

By  

Semiconductor Science and Technology, Vol. 30, Iss. 3, 2015-03 ,pp. : 35010-35015

IOP Publishing

Access to resources Recommend Favorite

Wafer-scale processing technology for monolithically integrated GaSb thermophotovoltaic device array on semi-insulating GaAs substrate

By Jung Min Kim   Dutta Partha S.   Brown Eric   Borrego Jose M.   Greiff Paul  

Semiconductor Science and Technology, Vol. 28, Iss. 6, 2013-06 ,pp. : 65002-65008

IOP Publishing

Access to resources Recommend Favorite

Fabrication of undoped semi-insulating InP by multiple-step wafer annealing

By Uchida M.   Kainosho K.   Ohta M.   Oda O.  

Journal of Electronic Materials, Vol. 27, Iss. 1, 1998-12 ,pp. : 10-13

Springer Publishing Company

Access to resources Recommend Favorite

Annealing and activation of silicon implanted in semi-insulating InP substrates

By Dong H.W.   Zhao Y.W.   Li J.M.  

Materials Science in Semiconductor Processing, Vol. 6, Iss. 4, 2003-08 ,pp. : 215-218

Elsevier

Access to resources Recommend Favorite