Investigation of charge loss characteristics of HfO₂ annealed in N₂ or O₂ ambient

Author： Yuqiong Chu Zongliang Huo Yulong Han Guoxing Chen Dong Zhang Xinkai Li Ming Liu

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.35, Iss.8, 2014-08, pp. : 83004-83008

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