![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Andrievskii V. Gorelenok A. Zagorel’skaya N. Kamanin A. Shmidt N.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1063-7850
Source: Technical Physics Letters, Vol.27, Iss.12, 2001-12, pp. : 1013-1015
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL
Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Minority carrier trap measurements in schottky barriers on N-type LPE GaAs
Revue de Physique Appliquée (Paris), Vol. 12, Iss. 12, 1977-12 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
OPERATION OF MAJORITY AND MINORITY CARRIER MOSFET'S AT LIQUID HELIUM TEMPERATURE
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :