Related content

Quantitative Auger Electron Spectroscopic Analysis of Hg_1−x Cd _x Te

By Gaucher A.   Martinez E.   Baylet J.   Cardinaud C.  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1255-1262

Springer Publishing Company

Access to resources Recommend Favorite

Structural influence on transport properties in [(PbSe)_1.00]_m(MoSe₂)_n misfit layered compounds

By Heideman Colby L   Johnson David C  

Semiconductor Science and Technology, Vol. 29, Iss. 6, 2014-06 ,pp. : 64007-64014

IOP Publishing

Access to resources Recommend Favorite

Galvanomagnetic properties and electronic structure of Pb_1−x−ySn_xV_yTe under pressure

By Skipetrov E P   Golovanov A N   Kovalev B B   Knotko A V   Slyn’ko E I   Slyn’ko V E  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15019-15027

IOP Publishing

Access to resources Recommend Favorite

The effects of B and P impurities on the electronic and optical properties of Si_{1 − x} Ge _x nanowires

By Zhang Yixi   Zhang Xi   Lai Xin   Xiang Gang  

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75023-75029

IOP Publishing

Access to resources Recommend Favorite

Effect of TiO₂ Ratio on the Phase and Microwave Dielectric Properties of Li₂ZnTi_3+x O_8+2x Ceramics

By Li Yingxiang   Li Hao   Li Junshan   Tang Bin   Zhang Shuren   Chen Hetuo   Wei Ya  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1107-1111

Springer Publishing Company

Access to resources Recommend Favorite