Related content

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate

By Borysiuk J   Zytkiewicz Z R   Sobanska M   Wierzbicka A   Klosek K   Korona K P   Perkowska P S   Reszka A  

Nanotechnology, Vol. 25, Iss. 13, 2014-04 ,pp. : 135610-135617

IOP Publishing

Access to resources Recommend Favorite

Ion Beam Induced Modification of Metal Nanoparticles Dispersed Polymeric Films

By Shah Sejal   Singh N. L.   Gavade Chaitali   Shivakumar V.   Sulania Indra   Tripathi A.   Singh F.   Avasthi D. K.   Upadhyay R. V.  

Integrated Ferroelectrics, Vol. 117, Iss. 1, 2010-01 ,pp. : 97-103

Taylor & Francis Ltd

Access to resources Recommend Favorite

Etching characteristics of a silicon surface induced by focused ion beam irradiation

By Kawasegi Noritaka   Morita Noboru   Yamada Shigeru   Takano Noboru   Oyama Tatsuo   Ashida Kiwamu   Taniguchi Jun   Miyamoto Iwao   Momota Sadao  

International Journal of Manufacturing Technology and Management, Vol. 9, Iss. 1-2, 2006-06 ,pp. : 34-50

Inderscience Publishers

Access to resources Recommend Favorite

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

By Ke S Y   Yang J   Qiu F   Wang Z Q   Wang C   Yang Y  

Nanotechnology, Vol. 26, Iss. 44, 2015-11 ,pp. : 445602-445613

IOP Publishing

Access to resources Recommend Favorite