Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

Author: Liang Li   Lin-An Yang   Jun-Shuai Xue   Rong-Tao Cao   Sheng-Rui Xu   Jin-Cheng Zhang   Yue Hao  

Publisher: IOP Publishing

ISSN: 1674-1056

Source: Chinese Physics B, Vol.23, Iss.6, 2014-06, pp. : 67103-67108

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