Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal—organic chemical vapor deposition

By Hai-Ying Xing   Zhang-Cheng Xu   Ming-Qi Cui   Yu-Xin Xie   Guo-Yi Zhang  

Chinese Physics B, Vol. 23, Iss. 10, 2014-10 ,pp. : 107803-107805

IOP Publishing

Access to resources Recommend Favorite

Improved crystal quality of GaN film with the in-plane lattice-matched In_0.17Al_0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

By Liang Li   Lin-An Yang   Jun-Shuai Xue   Rong-Tao Cao   Sheng-Rui Xu   Jin-Cheng Zhang   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 67103-67108

IOP Publishing

Access to resources Recommend Favorite

Effect of In_xGa_1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

By Wei-Ning Qian   Shi-Chen Su   Hong Chen   Zi-Guang Ma   Ke-Bao Zhu   Miao He   Ping-Yuan Lu   Geng Wang   Tai-Ping Lu   Chun-Hua Du   Qiao Wang   Wen-Bo Wu   Wei-Wei Zhang  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 106106-106110

IOP Publishing

Access to resources Recommend Favorite

In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

By Yi-Bin Yang   Ming-Gang Liu   Wei-Jie Chen   Xiao-Biao Han   Jie Chen   Xiu-Qi Lin   Jia-Li Lin   Hui Luo   Qiang Liao   Wen-Jie Zang   Yin-Song Chen   Yun-Ling Qiu   Zhi-Sheng Wu   Yang Liu   Bai-Jun Zhang  

Chinese Physics B, Vol. 24, Iss. 9, 2015-09 ,pp. : 96103-96107

IOP Publishing

Access to resources Recommend Favorite

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

By Lian-Kai Wang   Ren-Jun Liu   You Lü   Hao-Yu Yang   Guo-Xing Li   Yuan-Tao Zhang   Bao-Lin Zhang  

Chinese Physics B, Vol. 24, Iss. 1, 2015-01 ,pp. : 18102-18106

IOP Publishing

Access to resources Recommend Favorite