High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Author： Hong-Yu Guo Yuan-Jie Lv Guo-Dong Gu Shao-Bo Dun Yu-Long Fang Zhi-Rong Zhang Xin Tan Xu-Bo Song Xing-Ye Zhou Zhi-Hong Feng

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|11|118501-118503

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.11, 2015-11, pp. : 118501-118503

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