![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Dawei Yan Lisha Li Jian Ren Fuxue Wang Guofeng Yang Shaoqing Xiao Xiaofeng Gu
Publisher: IOP Publishing
ISSN: 1674-4926
Source: Journal of Semiconductors, Vol.35, Iss.4, 2014-04, pp. : 44007-44010
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
By Chen L.-C. Hsu C.-Y. Lan W.-H. Teng S.-Y.
Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. :