Related content

The storage lifetime model based on multi-performance degradation parameters

By Haochun Qi   Xiaoling Zhang   Xuesong Xie   Changzhi Lü  

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 104012-104016

IOP Publishing

Access to resources Recommend Favorite

ANALYSIS AND SIMULATION OF FUNCTIONAL STRESS DEGRADATION ON VDMOS POWER TRANSISTORS

By ZOAETER M.  

Active and Passive Electronic Components, Vol. 25, Iss. 3, 2002-01 ,pp. : 215-223

Taylor & Francis Ltd

Access to resources Recommend Favorite

A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors

By Kuntman A.   Ardali A.   Kuntman H.   Kacar F.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 217-223

Elsevier

Access to resources Recommend Favorite

A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization

By Jeong Chan-Yong   Lee Daeun   Song Sang-Hun     Lee Jong-Ho   Kwon Hyuck-In  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45023-45028

IOP Publishing

Access to resources Recommend Favorite

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

By  

Semiconductor Science and Technology, Vol. 30, Iss. 2, 2015-02 ,pp. : 24002-24017

IOP Publishing

Access to resources Recommend Favorite