A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection

Author: Jizhi Liu   Zhiwei Liu   Ze Jia   J Liou Juin.  

Publisher: IOP Publishing

ISSN: 1674-4926

Source: Journal of Semiconductors, Vol.35, Iss.6, 2014-06, pp. : 64010-64018

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