Related content

A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy

By Eyink K.   Capano M.   Walck S.   Haas T.   Streetman B.  

Journal of Electronic Materials, Vol. 26, Iss. 4, 1997-04 ,pp. : 391-396

Springer Publishing Company

Access to resources Recommend Favorite

Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

By Prakash Gokul   Gray Jennifer L   Kanicki J   Prakash Gokul  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55008-55015

IOP Publishing

Access to resources Recommend Favorite

Transmission electron microscopy study on domain structures in Bi 3 TiNbO 9 ceramics

By Su D.   Zhu J.S.   Xu Q.Y.   Liu J.S.   Wang Y.N.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 825-829

Elsevier

Access to resources Recommend Favorite

Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

By Zhao Lijie   Speck J.   Rajavel R.   Jensen J.   Leonard D.   Strand T.   Hamilton W.  

Journal of Electronic Materials, Vol. 29, Iss. 6, 2000-06 ,pp. : 732-735

Springer Publishing Company

Access to resources Recommend Favorite

Transmission Electron Microscopy Characterization of Ni(V) Metallization Stressed Under High Current Density in Flip Chip Solder Joints

By Tsai M.  

Journal of Electronic Materials, Vol. 39, Iss. 12, 2010-12 ,pp. : 2528-2535

Springer Publishing Company

Access to resources Recommend Favorite