Three‐dimensional reciprocal space mapping with a two‐dimensional detector as a low‐latency tool for investigating the influence of growth parameters on defects in semipolar GaN

Publisher： John Wiley & Sons Inc

E-ISSN： 1600-5767|48|4|1000-1010

ISSN： 0021-8898

Source： JOURNAL OF APPLIED CRYSTALLOGRAPHY (ELECTRONIC), Vol.48, Iss.4, 2015-08, pp. : 1000-1010

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