Author: Razeghi M.
Publisher: Edp Sciences
E-ISSN: 1286-0050|23|3|149-205
ISSN: 1286-0042
Source: EPJ Applied Physics (The), Vol.23, Iss.3, 2003-09, pp. : 149-205
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Defects in SiC substrates and epitaxial layers affecting semiconductor device performance
By Müller St. G. Sumakeris J. J. Brady M. F. Glass R. C. Hobgood H. McD. Jenny J. R. Leonard R. Malta D. P. Paisley M. J. Powell A. R. Tsvetkov V. F. Allen S. T. Das M. K. Palmour J. W. Carter C. H.
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :
High resolution THz gas spectrometer based on semiconductor and superconductor devices
EPJ Web of Conference, Vol. 132, Iss. issue, 2016-12 ,pp. :