Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry

Author： Losurdo M.   Giangregorio M. M.   Capezzuto P.   Bruno G.   Kim T.-H.   Choi S.   Brown A.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|31|3|159-164

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.31, Iss.3, 2005-09, pp. : 159-164

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