A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF₄-H₂-He PECVD

Author： Losurdo M. Giangregorio M. Grimaldi A. Capezzuto P. Bruno G.

E-ISSN： 1286-0050|26|3|187-192

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.26, Iss.3, 2004-05, pp. : 187-192

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