High-quality GaN on intentionally roughened c-sapphire

Author: Golan Y.   Fini P.   Dahan D.   Wu F.   Zamir S.   Salzman J.   Speck J. S.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|22|1|11-14

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.22, Iss.1, 2003-02, pp. : 11-14

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Abstract