Diminution of the activity of B atoms by H-induced defects inH2 and B2H6 co-implanted Si

Author： Yokota Katsuhiro   Nakase Syuusaku   Nakamura Kazuhiro   Miyashita Fumiyoshi   Tannjou Masayasu   Sakai Shigeki   Takano Hiromichi  

Publisher： Edp Sciences

E-ISSN： 1286-0050|27|1-3|129-132

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 129-132

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