Photoluminescence study of nitrogen effects on confined states in GaAs_1−xN_xGaAs quantum wells

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EPJ Applied Physics (The), Vol. 47, Iss. 3, 2009-06 ,pp. : 30302-30302

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Formation of Al_xGa_1−xSb films over GaSb substrates by Al diffusion

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EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 423-426

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Raman study on dislocation in high Al content Al_xGa_1−xN

By Pan X.   Wang X.L.   Xiao H.L.   Wang C.M.   Feng C.   Jiang L.J.   Yin H.   Chen H.  

EPJ Applied Physics (The), Vol. 58, Iss. 1, 2012-03 ,pp. : 10102-10102

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Anti-Stokes luminescence in nitrogen doped GaAs_1−xP_x alloys*

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EPJ Applied Physics (The), Vol. 1, Iss. 1, 2010-03 ,pp. : 35-38

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Growth of GaAs/Al_xGa_1−xAs layers by LPE method and their characterization by SIMS

By Arghavani Nia B.   Ghaderi A.   Solaymani S.   Oskoie M.  

EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 31303-31303

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