The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation

Author： Sogoyan A. Cherepko S. Pershenkov V.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7397

Source： Russian Microelectronics, Vol.43, Iss.2, 2014-03, pp. : 162-164

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