Author： Dasgupta S. Chauhan R. K. Singh G. Chakrabarti P.
Publisher： Taylor & Francis Ltd
ISSN： 1362-3060
Source： International Journal of Electronics, Vol.89, Iss.4, 2002-04, pp. : 277-288
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Abstract
A two-dimensional analytical model of a metal-oxide-semiconductor field-effect transistor (MOSFET) has been developed to examine theoretically the effect of ionizing radiation on the characteristics of an ion-implanted MOSFET. The radiation-induced change in the flat-band voltage have been utilized to estimate the characteristics of the device in the post-irradiated condition. The model has been used in conjunction with the Level-2 models of the SPICE package for estimating the ID-VD characteristics of the MOSFET in the post-irradiated condition. The model has been validated by reported experimental results. The two-dimensional nature of the model enables it to characterize even short-channel MOSFETs in the pre- and post-irradiated conditions.
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